Search results for "Silicon on insulator"
showing 10 items of 23 documents
Two prospective Li-based half-Heusler alloys for spintronic applications based on structural stability and spin–orbit effect
2017
To search for half-metallic materials for spintronic applications, instead of using an expensive trial-and-error experimental scheme, it is more efficient to use first-principles calculations to design materials first, and then grow them. In particular, using a priori information of the structural stability and the effect of the spin–orbit interaction (SOI) enables experimentalists to focus on favorable properties that make growing half-metals easier. We suggest that using acoustic phonon spectra is the best way to address the stability of promising half-metallic materials. Additionally, by carrying out accurate first-principles calculations, we propose two criteria for neglecting the SOI s…
First experimental demonstration of a plasmonic MMI switch in 10 Gb/s true data traffic conditions
2012
We report the first experimental performance evaluation of a 75 um long plasmonic MMI switch, hetero-integrated on a SOI platform, operating with 10Gb/s data signals. The switch exhibits 2.9μs response time and 44.5% modulation depth while its extinction ratio varies from 5.4 to -1.5 dB for 35mW switching power. Error-free performance was achieved.
Coupling evanescently low loss Silicon-on-insulator ridge waveguides including high Q nanocavities for light control
2011
Summary form only given. In this work, we propose an innovative way to achieve an air-slotted nanocavities by coupling evanescently low loss Silicon-on-insulator (SOI) ridge waveguides(WGs) including high Q nanocavities exhibiting an ultrasmall modal volume V. We first show that coupling two WGs allows us to achieve a field confinement within the air slot as low as lambda/30 while preserving a high group index of the guided modes. Then we demonstrate that merging such coupled WGs with state-of-the-art high-Q/small V nanocavities is a robust way to achieve a single compact (1 µm × 3 µm) air-slotted resonator on substrate. Finally, we extend the concept to multiple air-slotted resonator syste…
First demonstration of active plasmonic device in true data traffic conditions: On/off thermo-optic modulation using a hybrid silicon-plasmonic asymm…
2012
We demonstrate the first system-level evaluation of an active plasmonic device in 10Gb/s data traffic conditions. Thermo-optic ON/OFF modulation with 3μs response time and 10mW power consumption is presented using an asymmetric MZI silicon-plasmonic gate.
Sub-wavelength imaging of light confinement and propagation in SOI based photonic crystal devices
2006
A light source is coupled into photonic crystal devices and a near field optical probe is used to observe the electromagnetic field propagation and distribution at a sub-wavelength scale. Bloch modes are clearly observed.
Experimental evidence of high spatial confinement of elastic energy in a phononic cantilever
2021
We report on experimental high spatial confinement of elastic energy in a silicon phononic cantilever for which the quality factor of a higher-order flexural resonance is increased by a factor of 27 (from Q ∼ 80 to Q ∼ 2130) with the use of a three-row phononic crystal (PnC) strip. As shown by numerical simulations performed with the finite element method, the PnC both reduces anchor loss and confines elastic energy inside the cantilever. The PnC and the cantilever are fabricated with standard clean room techniques on a silicon on insulator substrate. Optical measurements of the out-of-plane displacements are performed with a laser scanning interferometer in a frequency range around 2 MHz.
Subwavelength imaging of field confinement in a waveguide-integrated photonic crystal cavity
2005
A photonic crystal microcavity is designed to obtain an original field distribution inside the cavity and the structure is etched inside a silicon-on-insulator waveguide. Spectral location of the photonic band gap and cavity resonance are identified by using transmittance measurements and by analyzing the light collected by a scanning near-field optical microscope probe exactly positioned on the center of the cavity. The results obtained with the two techniques are in very good agreement. Then the near-field distribution above the device is mapped and light confinement inside the cavity is evidenced. Moreover, this confined light presents some remarkable patterns which clearly correspond to…
Integrated plasmonic nanotweezers for nanoparticle manipulation.
2016
We numerically demonstrate that short gold nanoparticle chains coupled to traditional SOI waveguides allow conceiving surface plasmon-based nanotweezers. This configuration provides for jumpless control of the trapping position of a nano-object as a function of the excitation wavelength, allowing for linear repositioning. This novel feature can be captivating for the conception of compact integrated optomechanical nanoactuators.
Dopant-controlled single-electron pumping through a metallic island
2016
We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
Silicon quantum point contact with aluminum gate
2000
Fabrication and electrical properties of silicon quantum point contacts are reported. The devices are fabricated on bonded silicon on insulator (SOI) wafers by combining CMOS process steps and e-beam lithography. Mobility of 9000 cm2 Vs−1 is measured for a 60 nm-thick SOI film at 10 K. Weak localization data is used to estimate the phase coherence length at 4.2 K The point contacts show step like behaviour in linear response conductance at 1.5 K. At 200 mK universal conductance fluctuations begin to dominate the conductance curve. The effective diameter of quantum point constrictions of the devices are estimated to be 30–40 nm. This estimate is based on TEM analysis of test structures and A…